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| GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 DS5291-2.0 October 2000 FEATURES s s s s High Thermal Cycling Capability 800A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 800A 1600A APPLICATIONS s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP800DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Dual switch circuit diagram 5 6 3 7 8 1 ORDERING INFORMATION Order As: GP800DDM12 Note: When ordering, please use the whole part number. 10 12 9 4 11 2 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 www.dynexsemi.com GP800DDM12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 80C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 800 1600 6490 4000 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 40 C/kW Min. Max. 18 Units C/kW 2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC, Tcase = 50C tp = 1ms IF = 800A IF = 800A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.7 3.2 2.2 2.3 90 20 Max. 1 50 4 7.5 3.5 4 800 1600 2.4 2.5 Units mA mA A V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11 www.dynexsemi.com GP800DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 800A, VR = 50% VCES, dIF/dt = 2000A/s-1 Test Conditions IC = 800A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1100 150 130 800 320 90 150 Max. 1300 200 170 900 400 130 200 Units ns ns mJ ns ns mJ C Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 800A, VR = 50% VCES, dIF/dt = 2000A/s-1 Test Conditions IC = 800A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1300 200 170 950 350 150 200 Max. 1500 250 250 1200 450 200 260 Units ns ns mJ ns ns mJ C 4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 1600 1400 1200 Common emitter Tcase = 25C 1600 1400 1200 Common emitter Tcase = 125C Vge = 20/15/12/10V Collector current, IC - (A) 1000 800 600 400 200 0 0 Collector current, IC - (A) 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 160 140 120 Conditions: Tcase = 25C, VCE = 600V, VGE = 15V A 220 200 180 Turn-on energy, Eon - (mJ) 160 140 120 100 80 60 40 A : Rg = 6.8 B : Rg = 4.7 C : Rg = 3.3 0 100 200 300 400 500 600 Collector current, IC - (A) 700 800 Conditions: Tcase = 125C, VCE = 600V, VGE = 15V A Turn-on energy, Eon - (mJ) B C B 100 80 60 40 20 0 0 100 200 300 400 500 600 Collector current, IC - (A) 700 800 A : Rg = 6.8 B : Rg = 4.7 C : Rg = 3.3 C 20 0 Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11 www.dynexsemi.com GP800DDM12 180 160 140 Turn-off energy, Eoff - (mJ) B 120 100 80 60 40 20 0 A : Rg = 6.8 B : Rg = 4.7 C : Rg = 3.3 100 200 300 400 500 600 Collector current, IC - (A) 700 800 C Turn-off energy, Eoff - (mJ) Conditions: Tcase = 25C, VCE = 600V, VGE = 15V 250 Conditions: Tcase = 125C, VCE = 600V, VGE = 15V A B 150 C A 200 100 50 A : Rg = 6.8 B : Rg = 4.7 C : Rg = 3.3 0 0 100 200 300 400 500 600 Collector current, IC - (A) 700 800 0 Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current 70 60 Diode turn-off energy, Eoff(Diode) - (mJ) Conditions: VCE = 600V, VGE = 15V, Rg = 3.3 2000 Tcase = 125C 1800 1600 td(off) tf Conditions: Tcase = 125C, VCE = 600V VGE = 15V Rg = 3.3 40 Switching times, ts - (ns) 50 1400 1200 1000 800 600 400 30 Tcase = 25C td(on) 20 10 200 tr 0 0 200 400 600 Collector current, IC (A) 800 0 0 100 200 300 400 500 600 Collector currrent, IC - (A) 700 800 Fig.9 Typical diode reverse recovery charge vs collector current Fig.10 Typical switching characteristics 6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 1600 1400 1200 Tj = 25C Tj = 125C 1000 800 600 400 Collector current, IC - (A) 2000 1800 1600 Forward current, IF - (A) 1400 1200 1000 800 600 400 Tcase = 125C Vge = 15V Rg = 3.3* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 200 200 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 0 0 Fig.11 Diode typical forward characteristics Fig.12 Reverse bias safe operating area 10000 100 IC max. (single pulse) 1000 Collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (C/kW ) Diode Transistor 10 IC m .D ax 100 tp = 50s tp = 100s C (c uo tin on ) us tp = 1ms 1 10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 0.1 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig.13 Forward bias safe operating area Fig.14 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11 www.dynexsemi.com GP800DDM12 2000 1800 1600 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 1400 1200 Inverter phase current, IC(PK) - (A) 1400 1200 1000 800 600 400 Conditions: 200 Tj = 125C, Tc = 75C, Rg = 3.3, VCC = 600V 0 1 10 fmax - (kHz) DC collector current, IC - (A) 1000 800 600 400 200 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig.15 3-Phase inverter operating frequency Fig.16 DC current rating vs case temperature 8/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 15 15 62 13 5 65 6 24 3 16 1 11.85 7 8 9 4 2 18 12 26 13 11 10 14 11.5 35 20 4x M8 6x O7 6x M4 38 28 5 140 Nominal weight: 1000g Module outline type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 31.5 43.3 57 65 57 9/11 www.dynexsemi.com GP800DDM12 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS5291-2 Issue No. 2.0 October 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11 www.dynexsemi.com |
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